Author: RFMW

RFMW RFMW, Ltd. announces design and sales support for two new Peregrine Semiconductor SP5T switches targeting T/R and filter-band switching in Land Mobile Radio (LMR) and Military radio applications where high power handling (17W) is required. Both the PE42850 and PE42851 feature low power consumption of 130 microamperes which helps to extend battery life in mobile applications. The Peregrine PE42851 covers the frequency range of 100 to 1000 MHz while the PE42850 extends the low end frequency to 30 MHz. Both Peregrine switches feature a low, mid-band insertion loss of 0.25 dB, thereby reducing signal attenuation and resulting in less…

Read More

RFMW, Ltd. provides access to a video overview of the Telemakus, LLC series of USB Controlled Digital Attenuators. Using the TEA4000-7 as an example, the video steps through the functionality of the device by using its built-in GUI. The TEA4000-7 is a laboratory-quality, 7-bit Digital Attenuator with 31.75dB range in 0.25dB steps. The attenuator is fully terminated at all ports with a return loss better than 20dB from 50MHz to 4GHz. The Telemakus TEA4000-7 is among the smallest USB controlled microwave attenuators available on the market. An SMA male connector at port 1 and female connector at port 2 allow…

Read More

RFMW , Ltd. announces design and sales support for two new broad band, high-performance switches from Peregrine Semiconductor. Targeting the test and measurement market, the PE42520 and PE42521 SPDT switches offer performance to 13GHz at a 36dBm power rating. The resulting input IP3 (IIP3) is 66dBm while IIP2 is 115 dBm. Insertion loss measures 0.7dB at 7.5GHz while isolation is >41dB. Both devices have low gate lag, a key feature for test and measurement applications. The Peregrine PE42520 supports frequencies down to 9 KHz, while the PE42521 is a fast-switching variant that operates down to 100 MHz. Both Peregrine switches…

Read More

The IXRFD630 from IXYS RF. This highspeed,high-current CMOS gate driver is specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXYS IXRFD630 can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The driver input is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or…

Read More

RFMW, Ltd. announces design and sales support for Skyworks SKY12213-478LF, a single-pole, single-throw (SPST) switch capable of handling up to 150W of RF energy. The SKY12213-478LF spans the frequency range of 500 to 6000MHz with a typical isolation of 23dB. Based on silicon, PIN diode technology, the SKY12213-478LF is controlled with a single positive power supply  and draws minimal current yet insertion loss remains low at approximately 0.5dB mid band. Housed in a 4x4mm QFN package, the SKY12213-478LF is suitable for failsafe switching in LTE TDD base stations or LMR and military communications systems where a high power series diode…

Read More

RFMW, Ltd. announces design and sales support for a discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2080 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint TGF2080 provides 29.5dBm P1dB with 11.5dB associated gain and power added efficiency (PAE) of 56%. A silicon nitride, protective overcoat layer provides a level of environmental…

Read More

RFMW, Ltd. announces design and sales support for the MiniRF, 4-way splitter, model MRFSP0012. Covering the common CATV bandwidth of 5 to 1002MHz, the MRFSP0012 replaces three, 2-way splitters commonly used to achieve a 1 to 4 split thus saving board space, reducing part count and offering easier design configuration. And, the MiniRF MRFSP0012 offers a cost savings over comparable performing, multi-splitter topologies. Mid-band insertion loss is typically 0.75dB with 25dB isolation. Amplitude balance is typically <0.1 dB while phase balance is typically <1 degree with a maximum of 2.0 degrees. A 75 ohm characteristic impedance makes the MiniRF MRFSP0012 ideal for broadband, CATV applications. The MRFSP0012 comes on a castellated,…

Read More

RFMW, Ltd. announces design and sales support for Skyworks diode products. The SMV1771-040LF is a surface mount, hyperabrupt, tuning varactor diode offering a high capacitance ratio and low series resistance. This combination of characteristics makes the Skyworks  SMV1771-040LF ideal for use in low phase noise, voltage controlled oscillators (VCOs) operating from VHF to 2.5GHz. Applications include telecom infrastructure, military, automotive and consumer. The Skyworks SMV1771-040LF provides a replacement for the Renesas HVC374B which has announced end of life status. Part Number Min. Voltage Breakdown (V) Capacitance @ 1V (pF) Typ. Capacitance Ratio Max. Series Resistance @ 1V (ohms) Pacakge Dimensions (mm) SMV1771-040LF 12 22-24 2.7…

Read More

RFMW, Ltd. announces a web based tool that allows designers to create semi-custom Voltage Controlled Oscillators (VCOs) and Phase Locked Loop (PLL) synthesizers. Designers can search a large database of existing products based on parametric requirements and jump directly to existing product information. Should the database not include an exact match, users can define their requirement for an RFMD factory review and feedback. Often, requirements are a simple derivative of existing products. Narrow-band to octave band frequency coverage from product families ranging 10MHz to 8.5GHz. Ultra low phase noise oscillators provide unsurpassed performance in standard and small form factor, surface…

Read More

RFMW, Ltd. announces design and sales support for a discrete 600-Micron GaAs pHEMT FET. The  TGF2060 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.34 x 0.10mm chip suitable for eutectic die attach, the  TGF2060 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint  TGF2060 provides 28dBm P1dB with 12dB associated gain and power added efficiency (PAE) of 55%. A silicon nitride, protective overcoat layer provides a level of environmental…

Read More