RFMW, Ltd. announces design and sales support for TriQuint Semiconductor 885033, a 2.4GHz Wireless LAN / Bluetooth and LTE coexistence filter. The 885033 features high rejection in B38/40 bands. Performance is rated over a large temperature range (-30 to +85 degrees C) and the TriQuint 885033 is housed in an industry leading 1.4 x 1.2 x 0.46mm miniature package. Applications include high power WLAN access points and designs where WiFi bandpass filters are needed that enable the coexistence of 4G (WiMAX, LTE, TD-LTE) and WiFi signals.
Author: RFMW
RFMW announces design and sales support for the Rosenberger 32K243-40ML5 surface mount coaxial SMA female edge mount connector. The 32K243-40ML5 combines SMT ease-of-use with the ruggedness of a clamp style, edge-mount design. Rosenberger’s new connector has demonstrated performance at 26GHz with an optimized PCB footprint. Rosenberger offers technical support to customize designs based on customer use. When the PCB specifications are provided by Rosenberger, this connector can be optimized for applications including: high speed data, semiconductor evaluation boards, wireless data, optical data, military systems, navigation systems, SATCOM, medical systems, T&M and many more. A similar edge mount style is also…
ASR Series Test Cables High-Performance VNA test cables – the ASR Series. These high frequency assemblies are available individually, in pairs and phase-matched pairs as needed. They are manufactured using the finest materials currently available; offering durable interfaces for repeated matings and special low-loss cable construction for stability over temperature. These high quality assemblies are protected by a stainless steel armor for long-lasting performance in your lab or production test environment. Click here to view all EMC RF Cable Assemblies Click here to view ASR Series parts Click here to submit a Technical Inquiry or for more information
NXP Achieves Breakthrough Noise Figure Performance with Extreme Broadband Amplifiers RFMW announces the availability of NXP’s new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end-users with improved reception quality and higher bandwidth. Click here for more information. NXP BLF884P; BLF884PS: UHF Power LDMOS…
RFMW, Ltd. announces design and sales support for a discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions, the TGF2160 offers 63% PAE at 8V and 517mA Idss. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. A silicon nitride, protective overcoat layer provides a…
RFMW, Ltd. announces design and sales support for a 2-stage, high gain, low noise amplifier from Skyworks Solutions. The SKY67161-306LF provides 35-45dB of gain with a noise figure of only 0.3dB. Operating from 600 to 1100MHz, the Skyworks SKY67161-306LF’s active bias design enables high linearity coupled with unconditional stability for cellular infrastructure, repeaters and small cell applications. Gain is easily controlled with inter-stage matching to achieve desired gain with minimal impact to the device NF and linearity. Output P1dB is 24.5dBm from a 5V supply drawing 160mA. The Skyworks SKY67161-306LF is available in a 4x4x0.9mm QFN package.
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TQM8M9079 variable gain amplifier (VGA) with a 2200MHz instantaneous band width. Covering 500 to 2700MHz, the TQM8M9079 combines two gain blocks with a voltage variable attenuator (VVA) to provide 38dB of gain with 30dB gain variation range. The TriQuint TQM8M9079 draws 95mA of current from a 5V supply to provide 16dBm P1dB. Ideal for L-band radio, IF gain control in PTP systems or repeaters, the TQM8M9079 is housed in a compact, 5x5mm QFN package.
RFMW, Ltd. announces application and sales support for the Telemakus, LLC TEA13000-12 USB Controlled Digital Attenuator. The TEA13000-12 is used in bench top test or ATE applications and spans a frequency range of 100MHz to 13GHz. With 30dB of dynamic range, multiple attenuators can be ganged together to provide up to 90dB of attenuation with 16-bit control resolution. Telemakus USB controlled test devices are the smallest and least expensive USB controlled test devices on the market exhibiting this level of performance. The TEA13000-12 offers a typical insertion loss of only 2dB and uses 150mA from a standard USB 2.0 interface.…
RFMW, Ltd. announces design and sales support for IXYS RF model IXRFD631, a high-current CMOS gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXYS RF IXRFD631 employs a Kelvin ground connection on the input allowing the use of a common mode choke to avoid ground bounce problems. Capable of sinking 30 amps of peak current, the IXRFD631 can produce voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns.…
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2120, a discrete 1200-Micron GaAs pHEMT FET. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2120 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. The TGF2120 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint TGF2120 provides 31dBm P1dB with 11dB associated gain and power added efficiency (PAE) of 57%. A silicon nitride, protective overcoat layer provides a level of environmental…